FET Technology METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) 360 mJ
Pulsed Drain Current-Max (IDM) 60A
Drain-source On Resistance-Max 0.026Ohm
Drain Current-Max (Abs) (ID) 6.7A
Polarity/Channel Type N-CHANNEL
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status COMMERCIAL
Function Single-Chip Transceiver
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) 260
Voltage - Supply 3.135V~3.465V
Terminal Finish NICKEL PALLADIUM GOLD
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Operating Temperature -40°C~85°C