HSCH-5330
RoHS
/
Package 2-SMD, Beam Lead
Category Discrete Semiconductor Products / Diodes - RF
Description
SCHOTTKY DIODE BEAM LD LOW BARR
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Technical Details
Physical
Number of Pins 2
Diode Element Material SILICON
Package / Case 2-SMD, Beam Lead
Mount Surface Mount
Technical
Operating Temperature -65°C~175°C TJ
Packaging Bulk
Published 2006
JESD-609 Code e4
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish GOLD
HTS Code 8541.10.00.60
Subcategory Microwave Mixer Diodes
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Operating Supply Voltage 375mV
Number of Elements 1
Power Dissipation-Max 1W
Element Configuration Single
Diode Type Schottky - Single
Breakdown Voltage 4V
Forward Voltage 375mV
Max Repetitive Reverse Voltage (Vrrm) 4V
Capacitance @ Vr, F 0.1pF @ 0V 1MHz
Frequency Band L B TO K B
Resistance @ If, F 20Ohm @ 5mA 1MHz
Diode Capacitance-Max 0.1pF
Type of Schottky Barrier LOW BARRIER
Pulsed Input Power-Max 0.15W
Pulsed Input Power-Min 1W
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Alternative Model
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