JANTXV1N5807US
RoHS
/
Package SQ-MELF, B
Category Discrete Semiconductor Products / Diodes - Rectifiers - Single
Description
DIODE GEN PURP 50V 3A D5B
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Radiation Hardening No
Technical
Peak Non-Repetitive Surge Current 125A
Capacitance @ Vr, F 60pF @ 10V 1MHz
Max Repetitive Reverse Voltage (Vrrm) 50V
Peak Reverse Current 5μA
Reverse Recovery Time 30 ns
Number of Phases 1
Average Rectified Current 3A
Max Reverse Voltage (DC) 50V
Application ULTRA FAST RECOVERY
Output Current-Max 3A
Operating Temperature - Junction -65°C~175°C
Forward Current 6A
Case Connection ISOLATED
Voltage - Forward (Vf) (Max) @ If 875mV @ 4A
Current - Reverse Leakage @ Vr 5μA @ 50V
Diode Type Standard
Speed Fast Recovery =< 500ns, > 200mA (Io)
Element Configuration Single
Power Dissipation-Max 5W
Number of Elements 1
Qualification Status Qualified
Reference Standard MIL-19500
Pin Count 2
Terminal Form WRAP AROUND
Terminal Position END
HTS Code 8541.10.00.80
Additional Feature HIGH RELIABILITY, METALLURGICALLY BONDED
Min Operating Temperature -65°C
Max Operating Temperature 175°C
Terminal Finish Tin/Lead (Sn/Pb)
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Discontinued
Pbfree Code no
JESD-609 Code e0
Series Military, MIL-PRF-19500/477
Published 1997
Packaging Bulk
Physical
Diode Element Material SILICON
Number of Pins 2
Package / Case SQ-MELF, B
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Factory Lead Time 14 Weeks
Alternative Model
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