JAN1N6622
RoHS
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Package A, Axial
Category Discrete Semiconductor Products / Diodes - Rectifiers - Single
Description
DIODE GEN PURP 660V 2A AXIAL
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Inventory: 7070
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Technical Details
Supply Chain
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Physical
Contact Plating Lead, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case A, Axial
Diode Element Material SILICON
Technical
Packaging Bulk
Published 1997
Series Military, MIL-PRF-19500/585
JESD-609 Code e0
Pbfree Code no
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Additional Feature HIGH RELIABILITY
HTS Code 8541.10.00.80
Technology AVALANCHE
Terminal Position END
Terminal Form WRAP AROUND
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 2
Reference Standard MIL-19500
JESD-30 Code O-LELF-R2
Qualification Status Qualified
Number of Elements 1
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 500nA @ 660V
Voltage - Forward (Vf) (Max) @ If 1.6V @ 2A
Case Connection ISOLATED
Forward Current 1.2A
Operating Temperature - Junction -65°C~150°C
Application ULTRA FAST RECOVERY
Max Reverse Voltage (DC) 660V
Average Rectified Current 2A
Number of Phases 1
Reverse Recovery Time 30 ns
Max Repetitive Reverse Voltage (Vrrm) 660V
Capacitance @ Vr, F 10pF @ 10V 1MHz
Reverse Current-Max 0.5μA
Compliance
RoHS Status Non-RoHS Compliant
Alternative Model
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