JAN1N5552US
RoHS
/
Package SQ-MELF, B
Category Discrete Semiconductor Products / Diodes - Rectifiers - Single
Description
DIODE GEN PURP 600V 3A B-MELF
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Radiation Hardening No
Technical
Peak Non-Repetitive Surge Current 100A
Max Repetitive Reverse Voltage (Vrrm) 600V
Peak Reverse Current 1μA
Reverse Recovery Time 2 μs
Number of Phases 1
Current - Average Rectified (Io) 3A
Application POWER
Output Current-Max 3A
Operating Temperature - Junction -65°C~175°C
Forward Current 5A
Case Connection ISOLATED
Voltage - Forward (Vf) (Max) @ If 1.2V @ 9A
Current - Reverse Leakage @ Vr 1μA @ 600V
Diode Type Standard
Speed Standard Recovery >500ns, > 200mA (Io)
Element Configuration Single
Number of Elements 1
Qualification Status Qualified
JESD-30 Code O-LELF-R2
Reference Standard MIL-19500/420G
Pin Count 2
Terminal Form WRAP AROUND
Terminal Position END
HTS Code 8541.10.00.80
Min Operating Temperature -65°C
Max Operating Temperature 175°C
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Discontinued
Series Military, MIL-PRF-19500/420
Published 1997
Packaging Bulk
Physical
Diode Element Material SILICON
Package / Case SQ-MELF, B
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Lifecycle Status IN PRODUCTION (Last Updated: 2 weeks ago)
Factory Lead Time 8 Weeks
Alternative Model
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