SIDC06D65C8X1SA1
RoHS 
RoHS compliant
RoHS compliantPackage Die
Category Discrete Semiconductor Products / Diodes - Rectifiers - Single
Description
DIODE GEN PURP 600V 20A WAFER
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Technical
Reverse Current-Max 0.24μA
Max Dual Supply Voltage 650V
Number of Phases 1
Drain to Source Voltage (Vdss) 650V
Current - Average Rectified (Io) 20A DC
Halogen Free Halogen Free
Application FAST SOFT RECOVERY
Output Current-Max 20A
Operating Temperature - Junction -40°C~175°C
Voltage - Forward (Vf) (Max) @ If 1.87V @ 20A
Current - Reverse Leakage @ Vr 240nA @ 650V
Diode Type Standard
Speed Standard Recovery >500ns, > 200mA (Io)
Configuration SINGLE
Number of Elements 1
Operating Temperature (Max) 175°C
JESD-30 Code R-XUUC-N1
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form NO LEAD
Terminal Position UPPER
HTS Code 8541.10.00.40
ECCN Code EAR99
Number of Terminations 1
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 2011
Packaging Bulk
Physical
Diode Element Material SILICON
Surface Mount YES
Package / Case Die
Mounting Type Surface Mount
Alternative Model
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