D3501N40TXPSA1
RoHS
/
Package DO-200AE
Category Discrete Semiconductor Products / Diodes - Rectifiers - Single
Description
DIODE GEN PURP 4KV 4870A
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
Max Forward Surge Current (Ifsm) 56kA
Non-rep Pk Forward Current-Max 56000A
Rep Pk Reverse Voltage-Max 4000V
Max Repetitive Reverse Voltage (Vrrm) 4kV
Number of Phases 1
Current - Average Rectified (Io) 4870A
Voltage - DC Reverse (Vr) (Max) 4000V
Halogen Free Halogen Free
Application GENERAL PURPOSE
Output Current-Max 5220A
Operating Temperature - Junction -40°C~160°C
Voltage - Forward (Vf) (Max) @ If 1.27V @ 4000A
Current - Reverse Leakage @ Vr 100mA @ 4000V
Diode Type Standard
Speed Standard Recovery >500ns, > 200mA (Io)
Configuration SINGLE
Number of Elements 1
Operating Temperature (Max) 160°C
JESD-30 Code O-CEDB-N2
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form NO LEAD
Terminal Position END
HTS Code 8541.10.00.80
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) Not Applicable
Part Status Active
Published 2014
Packaging Bulk
Physical
Diode Element Material SILICON
Package / Case DO-200AE
Mounting Type Chassis Mount
Mount Screw
Supply Chain
Factory Lead Time 36 Weeks
Alternative Model
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