GB10SLT12-220
RoHS
/
Package TO-220-2
Category Discrete Semiconductor Products / Diodes - Rectifiers - Single
Description
GENESIC SEMICONDUCTOR - GB10SLT12-220 - Silicon Carbide Schottky Diode, Silicon, 1200V Series, Single, 1.2 kV, 10 A, 37 nC, TO-220AC
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Technical Details
Compliance
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Technical
Natural Thermal Resistance 0.8 °C/W
Recovery Time 25 ns
Capacitance @ Vr, F 520pF @ 1V 1MHz
Max Repetitive Reverse Voltage (Vrrm) 1.2kV
Reverse Recovery Time 0ns
Number of Phases 1
Average Rectified Current 10A
Max Reverse Voltage (DC) 1.2kV
Forward Voltage 1.8V
Voltage - DC Reverse (Vr) (Max) 1200V
Application EFFICIENCY
Max Surge Current 65A
Operating Temperature - Junction -55°C~175°C
Max Reverse Leakage Current 52μA
Forward Current 10A
Case Connection CATHODE
Voltage - Forward (Vf) (Max) @ If 1.8V @ 10A
Current - Reverse Leakage @ Vr 40μA @ 1200V
Diode Type Silicon Carbide Schottky
Speed No Recovery Time > 500mA (Io)
Element Configuration Single
Number of Elements 1
Base Part Number GB10SLT12
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 42W
HTS Code 8541.10.00.80
Additional Feature PD-CASE
Min Operating Temperature -55°C
Max Operating Temperature 175°C
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2015
Packaging Tube
Physical
Number of Pins 2
Package / Case TO-220-2
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 18 Weeks
Alternative Model
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