GB05SLT12-220
RoHS
/
Package TO-220-2
Category Discrete Semiconductor Products / Diodes - Rectifiers - Single
Description
GENESIC SEMICONDUCTOR GB05SLT12-220 Silicon Carbide Schottky Diode, Silicon, 1200V Series, Single, 1.2 kV, 5 A, 35 nC, TO-220AC
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Technical Details
Compliance
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Technical
Recovery Time 25 ns
Capacitance @ Vr, F 260pF @ 1V 1MHz
Max Repetitive Reverse Voltage (Vrrm) 1.2kV
Reverse Recovery Time 0ns
Number of Phases 1
Average Rectified Current 5A
Max Reverse Voltage (DC) 1.2kV
Voltage - DC Reverse (Vr) (Max) 1200V
Application EFFICIENCY
Output Current-Max 5A
Max Surge Current 32A
Operating Temperature - Junction -55°C~175°C
Max Reverse Leakage Current 26μA
Forward Current 5A
Case Connection CATHODE
Voltage - Forward (Vf) (Max) @ If 1.8V @ 2A
Current - Reverse Leakage @ Vr 50μA @ 1200V
Diode Type Silicon Carbide Schottky
Speed No Recovery Time > 500mA (Io)
Element Configuration Single
Number of Elements 1
Base Part Number GB05SLT12
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 42W
HTS Code 8541.10.00.80
Additional Feature PD-CASE
Min Operating Temperature -55°C
Max Operating Temperature 175°C
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2015
Packaging Bulk
Physical
Number of Pins 2
Package / Case TO-220-2
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 18 Weeks
Alternative Model
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