GB01SLT12-220
RoHS
/
Package TO-220-2
Category Discrete Semiconductor Products / Diodes - Rectifiers - Single
Description
GENESIC SEMICONDUCTOR GB01SLT12-220 Silicon Carbide Schottky Diode, Silicon, 1200V Series, Single, 1.2 kV, 1 A, 13 nC, TO-220AC
PDF
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Buying Options
Total Price: USD $2.81
Unit Price: USD $2.805517
≥1 USD $2.805517
≥10 USD $2.646704
≥100 USD $2.496893
≥500 USD $2.355564
≥1000 USD $2.222224
Inventory: 1109
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 18 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-2
Number of Pins 2
Technical
Packaging Bulk
Published 2005
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Max Power Dissipation 42W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number GB01SLT12
Element Configuration Single
Speed No Recovery Time > 500mA (Io)
Diode Type Silicon Carbide Schottky
Current - Reverse Leakage @ Vr 2μA @ 1200V
Voltage - Forward (Vf) (Max) @ If 1.8V @ 1A
Forward Current 1A
Max Reverse Leakage Current 4μA
Operating Temperature - Junction -55°C~175°C
Max Surge Current 10A
Voltage - DC Reverse (Vr) (Max) 1200V
Max Reverse Voltage (DC) 1.2kV
Average Rectified Current 1A
Reverse Recovery Time 0ns
Max Repetitive Reverse Voltage (Vrrm) 1.2kV
Capacitance @ Vr, F 69pF @ 1V 1MHz
Recovery Time 17 ns
Compliance
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Alternative Model
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