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MBRTA60030RL

GeneSiC Semiconductor
RoHS
/
Package Three Tower
Category Discrete Semiconductor Products / Diodes - Rectifiers - Arrays
Description DIODE SCHOTTKY 30V 300A 3TOWER
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Inventory: 1825
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Technical Details

Technical

Case Connection ISOLATED
Operating Temperature - Junction -55°C~150°C
Application POWER
Max Reverse Voltage (DC) 30V
Average Rectified Current 300A
Number of Phases 1
Non-rep Pk Forward Current-Max 4000A
Diode Configuration 1 Pair Common Anode
Reverse Current-Max 3000μA
Voltage - Forward (Vf) (Max) @ If 580mV @ 300A
Current - Reverse Leakage @ Vr 1mA @ 30V
Diode Type Schottky
Speed Fast Recovery =< 500ns, > 200mA (Io)
Element Configuration Common Anode
Number of Elements 2
Operating Temperature (Max) 150°C
JESD-30 Code R-PUFM-X3
Terminal Form UNSPECIFIED
Terminal Position UPPER
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Bulk

Compliance

RoHS Status RoHS Compliant

Physical

Diode Element Material SILICON
Package / Case Three Tower
Mounting Type Chassis Mount
Mount Chassis Mount

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