MBR60035CTL
RoHS
/
Package Twin Tower
Category Discrete Semiconductor Products / Diodes - Rectifiers - Arrays
Description
DIODE SCHOTTKY 35V 300A 2 TOWER
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Technical Details
Physical
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Twin Tower
Diode Element Material SILICON
Technical
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
HTS Code 8541.10.00.80
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PUFM-X2
Operating Temperature (Max) 150°C
Number of Elements 2
Element Configuration Common Cathode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 3mA @ 35V
Voltage - Forward (Vf) (Max) @ If 600mV @ 300A
Operating Temperature - Junction -55°C~150°C
Application POWER
Max Reverse Voltage (DC) 35V
Average Rectified Current 300A
Number of Phases 1
Non-rep Pk Forward Current-Max 4000A
Diode Configuration 1 Pair Common Cathode
Reverse Current-Max 3000μA
Compliance
RoHS Status RoHS Compliant
Alternative Model
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