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MBR120150CTR

GeneSiC Semiconductor
RoHS
RoHS RoHS compliant
Package Twin Tower
Category Discrete Semiconductor Products / Diodes - Rectifiers - Arrays
Description DIODE SCHOTTKY 150V 60A 2 TOWER
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Technical Details

Technical

JESD-30 Code R-PUFM-X2
Operating Temperature (Max) 150°C
Number of Elements 2
Element Configuration Common Anode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 1mA @ 150V
Voltage - Forward (Vf) (Max) @ If 880mV @ 60A
Operating Temperature - Junction -55°C~150°C
Application POWER
Max Reverse Voltage (DC) 150V
Average Rectified Current 60A
Number of Phases 1
Non-rep Pk Forward Current-Max 800A
Diode Configuration 1 Pair Common Anode
Reverse Current-Max 1000μA
Terminal Form UNSPECIFIED
Terminal Position UPPER
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
Packaging Bulk

Compliance

RoHS Status RoHS Compliant

Physical

Diode Element Material SILICON
Package / Case Twin Tower
Mounting Type Chassis Mount
Mount Chassis Mount

Supply Chain

Lifecycle Status PRODUCTION (Last Updated: 5 months ago)
Factory Lead Time 6 Weeks

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