Gate-Emitter Voltage-Max 20V
Power Dissipation-Max (Abs) 570W
Max Repetitive Reverse Voltage (Vrrm) 1.6kV
Max Collector Current 141A
Collector Emitter Voltage (VCEO) 1.2kV
Average Rectified Current 145A
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Voltage - Forward (Vf) (Max) @ If 168V @ 150A
Current - Reverse Leakage @ Vr 100μA @ 1600V
Diode Type Three Phase (Braking)
Element Configuration Single
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Subcategory Insulated Gate BIP Transistors
Additional Feature UL RECOGNIZED
Terminal Finish Gold (Au) - with Nickel (Ni) barrier
Number of Terminations 11
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~125°C TJ