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2N5089
RoHS
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Package TO-226-3
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
TO-226-3 Through Hole Single 3 Bipolar (BJT) Transistor 50mA 625mW 50MHz 30V
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Buying Options
Total Price: USD $0.06
Unit Price: USD $0.0608
≥1 USD $0.0608
≥500 USD $0.05035
≥1000 USD $0.04845
≥2000 USD $0.0475
≥5000 USD $0.0456
≥10000 USD $0.04085
Inventory: 4866
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Physical
Mount Through Hole
Package / Case TO-226-3
Technical
Published 2012
JESD-609 Code e0
Pbfree Code no
Part Status Active
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Additional Feature LOW NOISE
HTS Code 8541.21.00.95
Subcategory Other Transistors
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code O-PBCY-T3
Qualification Status Not Qualified
Number of Elements 1
Polarity NPN
Power Dissipation-Max 625mW
Element Configuration Single
Transistor Application AMPLIFIER
Gain Bandwidth Product 50MHz
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 50mA
JEDEC-95 Code TO-92
Collector Emitter Breakdown Voltage 25V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage 500mV
Frequency - Transition 50MHz
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 4.5V
DC Current Gain-Min (hFE) 400
Continuous Collector Current 50mA
Compliance
RoHS Status RoHS Compliant
Alternative Model
No data
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