Max Operating Temperature 150°C
Min Operating Temperature -55°C
Subcategory FET General Purpose Power
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Power Dissipation-Max 33W
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Halogen Free Halogen Free
Drain to Source Voltage (Vdss) 900V
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 400 ns
Continuous Drain Current (ID) 6.9A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 900V
Pulsed Drain Current-Max (IDM) 15A
Avalanche Energy Rating (Eas) 157 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Resistance 800mOhm
Capacitance - Input 1.1nF