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BSC190N15NS3GATMA1
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 150V 50A 8-Pin TDSON EP
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Buying Options
Total Price: USD $1.02
Unit Price: USD $1.0203
≥1 USD $1.0203
≥10 USD $0.8379
≥100 USD $0.8113
≥500 USD $0.78565
≥1000 USD $0.75905
Inventory: 2581
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 13 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Dimensions
Height 1.1mm
Compliance
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series OptiMOS?
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Reach Compliance Code not_compliant
Pin Count 8
JESD-30 Code R-PDSO-F5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 125W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 125W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 19m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 90μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2420pF @ 75V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Rise Time 53ns
Drive Voltage (Max Rds On,Min Rds On) 8V 10V
Vgs (Max) ±20V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 50A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 150V
Drain to Source Breakdown Voltage 150V
Pulsed Drain Current-Max (IDM) 200A
Max Junction Temperature (Tj) 150°C
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