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FDMS86103L

ON Semiconductor
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description In a Pack of 3, N-Channel MOSFET, 49 A, 100 V, 8-Pin Power 56 ON Semiconductor FDMS86103L
Buying Options
Total Price: USD $1.14
Unit Price: USD $1.136442
≥1 USD $1.136442
≥10 USD $1.07212
≥100 USD $1.01143
≥500 USD $0.954179
≥1000 USD $0.900178
Inventory: 3000
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 68.1mg
Transistor Element Material SILICON

Dimensions

Height 1.05mm
Length 5mm
Width 6.15mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
JESD-30 Code R-PDSO-F5
Number of Elements 1
Power Dissipation-Max 2.5W Ta 104W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3710pF @ 50V
Current - Continuous Drain (Id) @ 25°C 12A Ta 49A Tc
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Rise Time 7.2ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 49A
Threshold Voltage 1.9V
JEDEC-95 Code MO-240AA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V

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