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BSC039N06NSATMA1
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 19A TDSON-8
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Buying Options
Total Price: USD $1.17
Unit Price: USD $1.174953
≥1 USD $1.174953
≥10 USD $1.108449
≥100 USD $1.045717
≥500 USD $0.986518
≥1000 USD $0.930683
Inventory: 9468
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 26 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2012
Series OptiMOS?
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Reach Compliance Code not_compliant
Pin Count 8
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 2.5W Ta 69W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.9m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2.8V @ 36μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 30V
Current - Continuous Drain (Id) @ 25°C 19A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Rise Time 12ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 2.1V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 60V
Drain-source On Resistance-Max 0.0039Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 50 mJ
Max Junction Temperature (Tj) 150°C
Feedback Cap-Max (Crss) 44 pF
Dimensions
Height 1.1mm
Compliance
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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