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IRF6616TRPBF
RoHS 
RoHS compliant
RoHS compliantPackage DirectFET? Isometric MX
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 40V 19A DIRECTFET
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Buying Options
Total Price: USD $0.5
Unit Price: USD $0.497754
≥1 USD $0.497754
≥10 USD $0.469568
≥100 USD $0.442992
≥500 USD $0.417923
≥1000 USD $0.394261
Inventory: 9542
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric MX
Number of Pins 5
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series HEXFET?
JESD-609 Code e1
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Current Rating 19A
JESD-30 Code R-XBCC-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.8W Ta 89W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 89W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5m Ω @ 19A, 10V
Vgs(th) (Max) @ Id 2.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3765pF @ 20V
Current - Continuous Drain (Id) @ 25°C 19A Ta 106A Tc
Gate Charge (Qg) (Max) @ Vgs 44nC @ 4.5V
Rise Time 19ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.4 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 15A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Avalanche Energy Rating (Eas) 36 mJ
Dimensions
Height 508μm
Length 6.35mm
Width 5.0546mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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