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FQPF11N40C
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3 Full Pack
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET 400V N-Channel Advance Q-FET
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Buying Options
Total Price: USD $1.02
Unit Price: USD $1.0203
≥1 USD $1.0203
≥10 USD $0.8379
≥100 USD $0.8113
≥500 USD $0.78565
≥1000 USD $0.75905
Inventory: 5241
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Physical
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 2.27g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Series QFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Voltage - Rated DC 400V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating 10.5A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 44W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 44W
Case Connection ISOLATED
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 530m Ω @ 5.25A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1090pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10.5A Tc
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Rise Time 89ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 81 ns
Turn-Off Delay Time 81 ns
Continuous Drain Current (ID) 10.5A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 400V
Pulsed Drain Current-Max (IDM) 42A
Dimensions
Height 9.19mm
Length 10.16mm
Width 4.7mm
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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Rochester Electronics, LLC