Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) Not Applicable
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 21W Tc
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 600m Ω @ 1.7A, 10V
Vgs(th) (Max) @ Id 4V @ 80μA
Input Capacitance (Ciss) (Max) @ Vds 363pF @ 400V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 37 ns
Continuous Drain Current (ID) 6A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.6Ohm
Drain to Source Breakdown Voltage 600V
Max Junction Temperature (Tj) 150°C