Operating Temperature -55°C~175°C TJ
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 650W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 23m Ω @ 59A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6080pF @ 25V
Current - Continuous Drain (Id) @ 25°C 98A Tc
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 39 ns
Continuous Drain Current (ID) 98A
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 95A
Drain to Source Breakdown Voltage 200V
Avalanche Energy Rating (Eas) 960 mJ