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7132SA35CB

Integrated Device Technology (IDT)
RoHS
/
Package DIP
Category Memory / Memory
Description Asynchronous Active 3-STATE 2007 (Memory Format) Memory 125C 5.5V 16kb 230mA
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Buying Options
Total Price: USD $1222.15
Unit Price: USD $1222.150711
≥1 USD $1222.150711
≥10 USD $1181.963935
≥25 USD $1173.747705
≥50 USD $1165.588589
≥100 USD $1141.614673
≥500 USD $1059.995054
Inventory: 5886
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 10 Weeks

Physical

Mount Through Hole
Package / Case DIP
Number of Pins 48

Technical

Published 2007
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1
Number of Terminations 48
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature 125°C
Min Operating Temperature -55°C
Additional Feature AUTOMATIC POWER-DOWN
Subcategory SRAMs
Technology CMOS
Terminal Position DUAL
Peak Reflow Temperature (Cel) 240
Number of Functions 1
Supply Voltage 5V
Pin Count 48
Operating Supply Voltage 5V
Power Supplies 5V
Temperature Grade MILITARY
Interface Parallel
Max Supply Voltage 5.5V
Min Supply Voltage 4.5V
Number of Ports 2
Nominal Supply Current 230mA
Memory Type RAM, SRAM
Access Time 35 ns
Output Characteristics 3-STATE
Address Bus Width 22b
Density 16 kb
Standby Current-Max 0.03A
Screening Level MIL-PRF-38535
I/O Type COMMON
Sync/Async Asynchronous
Word Size 8b

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Contains Lead

Dimensions

Length 61.72mm
Width 15.24mm
Thickness 3.3mm

Alternative Model

No data

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