Operating Temperature -55°C~175°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Additional Feature ESD PROTECTION
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 96W Tc
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 28m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 40A Tc
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain Current-Max (Abs) (ID) 40A
Drain-source On Resistance-Max 0.028Ohm
Pulsed Drain Current-Max (IDM) 160A
DS Breakdown Voltage-Min 55V
Avalanche Energy Rating (Eas) 70 mJ
Feedback Cap-Max (Crss) 160 pF
Turn Off Time-Max (toff) 62ns
Turn On Time-Max (ton) 94ns