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NVD5117PLT4G
RoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Single P-Channel Power MOSFET -60V, -61A, 16mO
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Buying Options
Total Price: USD $2.15
Unit Price: USD $2.1489
≥1 USD $2.1489
≥10 USD $1.7632
≥100 USD $1.7081
≥500 USD $1.653
≥1000 USD $1.5979
Inventory: 4888
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 19 Weeks
Lifecycle Status LIFETIME (Last Updated: 6 days ago)
Physical
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series Automotive, AEC-Q101
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 4.1W Ta 118W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 4.1W
Case Connection DRAIN
Turn On Delay Time 22 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 16m Ω @ 29A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4.8nF @ 25V
Current - Continuous Drain (Id) @ 25°C 11A Ta 61A Tc
Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V
Rise Time 195ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 132 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 11A
Threshold Voltage -1.5V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.022Ohm
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 240 mJ
Number of Segments 80
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