Welcome to flywing-tech.com ｜ info@flywing-tech.com
- English
Account & Orders
New Account? Start here
IPA60R060P7XKSA1
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3 Full Pack
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CHANNEL 600V 48A TO220
PDF
/
Buying Options
Total Price: USD $11.28
Unit Price: USD $11.2765
≥1 USD $11.2765
≥10 USD $9.253
≥100 USD $8.96325
≥500 USD $8.67445
≥1000 USD $8.38565
Inventory: 998
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 18 Weeks
Physical
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface Mount NO
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2014
Series CoolMOS? P7
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 29W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 60m Ω @ 15.9A, 10V
Vgs(th) (Max) @ Id 4V @ 800μA
Input Capacitance (Ciss) (Max) @ Vds 2895pF @ 400V
Current - Continuous Drain (Id) @ 25°C 48A Tc
Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.06Ohm
Pulsed Drain Current-Max (IDM) 151A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 159 mJ
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
BT151X-650LTNQ
WeEn SemiconductorsRecommended For You
SIRA36DP-T1-GE3
Vishay Siliconix