Operating Temperature -55°C~150°C TJ
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 391W Tc
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 70m Ω @ 25.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1.72mA
Input Capacitance (Ciss) (Max) @ Vds 3800pF @ 100V
Current - Continuous Drain (Id) @ 25°C 53A Tc
Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain Current-Max (Abs) (ID) 53A
Drain-source On Resistance-Max 0.07Ohm
Pulsed Drain Current-Max (IDM) 159A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 1135 mJ