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DTB123EKT146

ROHM Semiconductor
RoHS
RoHS RoHS compliant
Package TO-236-3, SC-59, SOT-23-3
Category Transistors - Bipolar (BJT) - Single, Pre-Biased / Transistors - Bipolar (BJT) - Single, Pre-Biased
Description TRANS PREBIAS PNP 200MW SMT3
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Buying Options
Total Price: USD $0.94
Unit Price: USD $0.188611
≥5 USD $0.188611
≥50 USD $0.153675
≥150 USD $0.138708
≥500 USD $0.120038
≥3000 USD $0.111714
≥6000 USD $0.106726
Inventory: 974
Minimum: 5
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+

Technical Details

Supply Chain

Factory Lead Time 13 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3

Dimensions

Height 1.1mm
Length 2.9mm
Width 1.6mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
HTS Code 8541.21.00.75
Subcategory BIP General Purpose Small Signal
Voltage - Rated DC -50V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -500mA
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number DTB123
Pin Count 3
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 200mW
Transistor Application SWITCHING
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 39 @ 50mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 200MHz
Max Breakdown Voltage 50V
Frequency - Transition 200MHz
hFE Min 39
Resistor - Base (R1) 2.2 k Ω
Resistor - Emitter Base (R2) 2.2 k Ω

Alternative Model

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