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DTA115EUAT106
RoHS 
RoHS compliant
RoHS compliantPackage SC-70, SOT-323
Category Transistors - Bipolar (BJT) - Single, Pre-Biased / Transistors - Bipolar (BJT) - Single, Pre-Biased
Description
TRANS PREBIAS PNP 200MW UMT3
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Buying Options
Total Price: USD $222.6
Unit Price: USD $22.2604
≥10 USD $22.2604
≥100 USD $18.26565
≥300 USD $17.6947
Inventory: 2320
Minimum: 10
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Technical Details
Supply Chain
Factory Lead Time 10 Weeks
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e1
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
HTS Code 8541.21.00.75
Subcategory BIP General Purpose Small Signal
Voltage - Rated DC -50V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -20mA
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number DTA115
Pin Count 3
Max Output Current 100mA
Operating Supply Voltage 50V
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 200mW
Transistor Application SWITCHING
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 20mA
DC Current Gain (hFE) (Min) @ Ic, Vce 82 @ 5mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 250MHz
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
hFE Min 82
Resistor - Base (R1) 100 k Ω
Continuous Collector Current -100mA
Resistor - Emitter Base (R2) 100 k Ω
Alternative Model
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