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DTD113ZKT146
RoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Transistors - Bipolar (BJT) - Single, Pre-Biased / Transistors - Bipolar (BJT) - Single, Pre-Biased
Description
TRANS PREBIAS NPN 200MW SMT3
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Buying Options
Total Price: USD $174.05
Unit Price: USD $0.058016
≥3000 USD $0.058016
Inventory: 15000
Minimum: 3000
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Technical Details
Supply Chain
Factory Lead Time 13 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Technical
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 10
HTS Code 8541.21.00.75
Subcategory BIP General Purpose Small Signal
Voltage - Rated DC 50V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 500mA
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number DTD113
Pin Count 3
Max Output Current 500mA
Operating Supply Voltage 50V
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 200mW
Transistor Application SWITCHING
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 82 @ 50mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 200MHz
Max Breakdown Voltage 50V
Frequency - Transition 200MHz
hFE Min 82
Resistor - Base (R1) 1 k Ω
Continuous Collector Current 500mA
Resistor - Emitter Base (R2) 10 k Ω
Dimensions
Height 1.1mm
Length 2.9mm
Width 1.6mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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