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DDTD123YC-7-F

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package TO-236-3, SC-59, SOT-23-3
Category Transistors - Bipolar (BJT) - Single, Pre-Biased / Transistors - Bipolar (BJT) - Single, Pre-Biased
Description TRANS PREBIAS NPN 200MW SOT23-3
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Buying Options
Total Price: USD $0.31
Unit Price: USD $0.031494
≥10 USD $0.031494
≥100 USD $0.028117
≥300 USD $0.026429
Inventory: 2220
Minimum: 10
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+

Technical Details

Supply Chain

Factory Lead Time 19 Weeks

Physical

Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON

Technical

Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 4.54
HTS Code 8541.21.00.75
Subcategory BIP General Purpose Small Signal
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number DTD123
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN RESISTOR
Power - Max 200mW
Polarity/Channel Type NPN
Transistor Type NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 56 @ 50mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 500mA
Transition Frequency 200MHz
Frequency - Transition 200MHz
Power Dissipation-Max (Abs) 0.2W
Resistor - Base (R1) 2.2 k Ω
Resistor - Emitter Base (R2) 10 k Ω

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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