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PDTC123ET,215 image
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PDTC123ET,215

Nexperia USA Inc.
RoHS
RoHS RoHS compliant
Package TO-236-3, SC-59, SOT-23-3
Category Transistors - Bipolar (BJT) - Single, Pre-Biased / Transistors - Bipolar (BJT) - Single, Pre-Biased
Description TRANS PREBIAS NPN 250MW TO236AB
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Buying Options
Total Price: USD $0.55
Unit Price: USD $0.02755
≥20 USD $0.02755
≥200 USD $0.0228
≥600 USD $0.02185
≥3000 USD $0.0209
≥9000 USD $0.01995
≥21000 USD $0.01805
Inventory: 4120
Minimum: 20
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Technical Details

Supply Chain

Factory Lead Time 4 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 4.535924g

Technical

Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
HTS Code 8541.21.00.95
Max Power Dissipation 250mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number PDTC123
Pin Count 3
Number of Elements 1
Polarity NPN
Element Configuration Single
Transistor Application SWITCHING
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 20mA 5V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 150mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Resistor - Base (R1) 2.2 k Ω
Resistor - Emitter Base (R2) 2.2 k Ω

Dimensions

Height 6.35mm
Length 6.35mm
Width 6.35mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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