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MUN5216DW1T1G
RoHS 
RoHS compliant
RoHS compliantPackage 6-TSSOP, SC-88, SOT-363
Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Description
ON SEMICONDUCTOR - MUN5216DW1T1G - BRT TRANSISTOR, 50V, 4.7KOHM, SOT-363, FULL REEL
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Buying Options
Total Price: USD $2.76
Unit Price: USD $0.27645
≥10 USD $0.27645
≥100 USD $0.22705
≥300 USD $0.2204
≥3000 USD $0.2128
≥6000 USD $0.20615
≥9000 USD $0.1843
Inventory: 1860
Minimum: 10
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Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Physical
Contact Plating Tin
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Number of Pins 6
Technical
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR
Subcategory BIP General Purpose Small Signal
Voltage - Rated DC 50V
Max Power Dissipation 250mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 100mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MUN52**DW1T
Pin Count 6
Max Output Current 100mA
Operating Supply Voltage 50V
Number of Elements 2
Polarity NPN
Element Configuration Dual
Power Dissipation 187mW
Transistor Application SWITCHING
Halogen Free Halogen Free
Transistor Type 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
hFE Min 160
Resistor - Base (R1) 4.7k Ω
Continuous Collector Current 100mA
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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