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CMF20120D
RoHS
/
Package TO-247-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
WOLFSPEED - CMF20120D - N CHANNEL, SIC POWER MOSFET, 1200V, 42A, TO247-3
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Buying Options
Total Price: USD $2.5
Unit Price: USD $2.503811
≥1 USD $2.503811
≥10 USD $2.362084
≥100 USD $2.22838
≥500 USD $2.102253
≥1000 USD $1.983256
Inventory: 4255
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 10 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Supplier Device Package TO-247-3
Technical
Operating Temperature -55°C~135°C TJ
Packaging Tube
Published 2005
Series Z-FET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 135°C
Min Operating Temperature -55°C
Technology SiCFET (Silicon Carbide)
Number of Elements 1
Power Dissipation-Max 215W Tc
Element Configuration Single
Power Dissipation 150W
Turn On Delay Time 13 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 110mOhm @ 20A, 20V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1915pF @ 800V
Current - Continuous Drain (Id) @ 25°C 42A Tc
Gate Charge (Qg) (Max) @ Vgs 90.8nC @ 20V
Rise Time 38ns
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 20V
Vgs (Max) +25V, -5V
Fall Time (Typ) 24 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 42A
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 1.2kV
Input Capacitance 1.915nF
Drain to Source Resistance 80mOhm
Rds On Max 110 mΩ
Nominal Vgs 2.5 V
Dimensions
Height 21.1mm
Length 16.13mm
Width 5.21mm
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status RoHS Compliant
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