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NVMFS5C670NLT1G

ON Semiconductor
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 60V 71A SO8FL
Buying Options
Total Price: USD $19.49
Unit Price: USD $19.486671
≥1 USD $19.486671
≥10 USD $18.383652
≥100 USD $17.343067
≥500 USD $16.361393
≥1000 USD $15.435268
Inventory: 2497
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 38 Weeks
Lifecycle Status ACTIVE, NOT REC (Last Updated: 14 hours ago)

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2015
JESD-609 Code e3
Pbfree Code yes
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Reach Compliance Code not_compliant
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.6W Ta 61W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.1m Ω @ 35A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 17A Ta 71A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 60 ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 71A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 440A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 166 mJ

Compliance

REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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