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IPD60R450E6ATMA1
RoHS
/
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
CoolMOS? E6 Tape & Reel (TR) Surface Mount N-Channel Mosfet Transistor 9.2A Tc 9.2A 74W Tc 10ns
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Buying Options
Total Price: USD $1.34
Unit Price: USD $1.34235
≥1 USD $1.34235
≥10 USD $1.102
≥100 USD $1.0678
≥500 USD $1.03265
≥1000 USD $0.99845
Inventory: 941
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 3.949996g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series CoolMOS? E6
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 74W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 450m Ω @ 3.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 280μA
Input Capacitance (Ciss) (Max) @ Vds 620pF @ 100V
Current - Continuous Drain (Id) @ 25°C 9.2A Tc
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Rise Time 9ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) 9.2A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
Drain-source On Resistance-Max 0.45Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 26A
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Alternative Model
No data
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