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BSB012NE2LX
RoHS
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Package 3-WDSON
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 25V 170A WDSON-2
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Buying Options
Total Price: USD $1.72
Unit Price: USD $1.716774
≥1 USD $1.716774
≥10 USD $1.619594
≥100 USD $1.527913
≥500 USD $1.441434
≥1000 USD $1.359839
Inventory: 7154
Minimum: 1
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Technical Details
Physical
Mounting Type Surface Mount
Package / Case 3-WDSON
Surface Mount YES
Number of Pins 7
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series OptiMOS?
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
ECCN Code EAR99
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Pin Count 2
JESD-30 Code R-MBCC-N2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.8W Ta 57W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 5.7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.2m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 4900pF @ 12V
Current - Continuous Drain (Id) @ 25°C 37A Ta 170A Tc
Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V
Rise Time 6 ns
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.6 ns
Turn-Off Delay Time 34 ns
Continuous Drain Current (ID) 56A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 39A
Drain-source On Resistance-Max 0.0012Ohm
Pulsed Drain Current-Max (IDM) 400A
DS Breakdown Voltage-Min 25V
Avalanche Energy Rating (Eas) 285 mJ
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
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