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IRF6725MTRPBF
RoHS 
RoHS compliant
RoHS compliantPackage DirectFET? Isometric MX
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 28A DIRECTFET
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Buying Options
Total Price: USD $1.38
Unit Price: USD $1.3832
≥1 USD $1.3832
≥10 USD $1.13525
≥100 USD $1.09915
≥500 USD $1.064
≥1000 USD $1.02885
Inventory: 9581
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 17 Weeks
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
JESD-30 Code R-XBCC-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.8W Ta 100W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 100W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.2m Ω @ 28A, 10V
Vgs(th) (Max) @ Id 2.35V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 4700pF @ 15V
Current - Continuous Drain (Id) @ 25°C 28A Ta 170A Tc
Gate Charge (Qg) (Max) @ Vgs 54nC @ 4.5V
Rise Time 22 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 170A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 28A
Drain-source On Resistance-Max 0.0022Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 220A
Avalanche Energy Rating (Eas) 190 mJ
Nominal Vgs 1.8 V
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Dimensions
Height 506μm
Length 6.35mm
Width 5.05mm
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric MX
Number of Pins 5
Transistor Element Material SILICON
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