Operating Temperature -55°C~175°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 203W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.2m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 3789pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 81 ns
Continuous Drain Current (ID) 143A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 40V
Drain Current-Max (Abs) (ID) 75A
Drain-source On Resistance-Max 0.0052Ohm
Drain to Source Breakdown Voltage 40V
Avalanche Energy Rating (Eas) 494 mJ