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STS4DNFS30L
RoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 4A 8-SOIC
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Buying Options
Total Price: USD $1.38
Unit Price: USD $1.3832
≥1 USD $1.3832
≥10 USD $1.13525
≥100 USD $1.09915
≥500 USD $1.064
≥1000 USD $1.02885
Inventory: 3630
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 4.535924g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series STripFET?
JESD-609 Code e4
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 56mOhm
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 4A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STS4D
Pin Count 8
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 55m Ω @ 2A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 330pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4A Tc
Gate Charge (Qg) (Max) @ Vgs 9nC @ 5V
Rise Time 100 ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 22 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 4A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 4A
Drain to Source Breakdown Voltage 30V
FET Feature Schottky Diode (Isolated)
Dimensions
Height 6.35mm
Length 6.35mm
Width 12.7mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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