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STP12PF06
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 60V 12A TO-220
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Buying Options
Total Price: USD $0.54
Unit Price: USD $0.5377
≥1 USD $0.5377
≥10 USD $0.4408
≥100 USD $0.4275
≥500 USD $0.41325
≥1000 USD $0.39995
Inventory: 1562
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Dimensions
Height 9.15mm
Length 10.4mm
Width 4.6mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series STripFET? II
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Resistance 200mOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -60V
Technology MOSFET (Metal Oxide)
Current Rating -12A
Base Part Number STP12
Pin Count 3
Number of Elements 1
Power Dissipation-Max 60W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 60W
Turn On Delay Time 20 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 200m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 850pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Rise Time 40 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 12A
Threshold Voltage 3.4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -60V
Pulsed Drain Current-Max (IDM) 48A
Dual Supply Voltage 60V
Avalanche Energy Rating (Eas) 200 mJ
Nominal Vgs 3.4 V
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