Operating Temperature 150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin/Lead (Sn/Pb)
Additional Feature HIGH VOLTAGE, FAST SWITCHING
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 190W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 380m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 14A Tc
Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 170 ns
Continuous Drain Current (ID) 14A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.38Ohm
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 56A
Avalanche Energy Rating (Eas) 800 mJ
Feedback Cap-Max (Crss) 200 pF
Turn Off Time-Max (toff) 210 ns
Turn On Time-Max (ton) 150 ns