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IRF510
RoHS
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Package TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
POWER, N-CHANNEL, MOSFET
PDF
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Buying Options
Total Price: USD $0.69
Unit Price: USD $0.6916
≥1 USD $0.6916
≥10 USD $0.5681
≥100 USD $0.55005
≥500 USD $0.532
≥1000 USD $0.5149
Inventory: 4873
Minimum: 1
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Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN LEAD
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 43W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 540m Ω @ 3.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 180pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.6A Tc
Gate Charge (Qg) (Max) @ Vgs 8.3nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 5.6A
Drain-source On Resistance-Max 0.54Ohm
Pulsed Drain Current-Max (IDM) 20A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 19 mJ
Compliance
RoHS Status Non-RoHS Compliant
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