Operating Temperature -55°C~175°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 650W Tc
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.7m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 15300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 230A Tc
Gate Charge (Qg) (Max) @ Vgs 250nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Continuous Drain Current (ID) 230A
Drain-source On Resistance-Max 0.0047Ohm
Pulsed Drain Current-Max (IDM) 500A