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AOB20S60L
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 20A TO263
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Buying Options
Total Price: USD $2.77
Unit Price: USD $2.76545
≥1 USD $2.76545
≥10 USD $2.26955
≥100 USD $2.1983
≥500 USD $2.12705
≥1000 USD $2.05675
Inventory: 8182
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 18 Weeks
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series aMOS?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 266W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 199m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 4.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1038pF @ 100V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Gate Charge (Qg) (Max) @ Vgs 19.8nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 30V
Pulsed Drain Current-Max (IDM) 80A
DS Breakdown Voltage-Min 600V
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Compliance
RoHS Status ROHS3 Compliant
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