Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 50W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 150m Ω @ 5.9A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11.8A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 11.8A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 48A
Avalanche Energy Rating (Eas) 250 mJ