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IPB80N04S404ATMA1
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 40V 80A TO263-3-2
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Buying Options
Total Price: USD $4.37
Unit Price: USD $4.373278
≥1 USD $4.373278
≥10 USD $4.125734
≥100 USD $3.892199
≥500 USD $3.671887
≥1000 USD $3.464046
Inventory: 6105
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Compliance
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series OptiMOS?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 71W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.2m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 35μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 3440pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Rise Time 12ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 9 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 40V
Drain-source On Resistance-Max 0.0042Ohm
Avalanche Energy Rating (Eas) 100 mJ
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