Welcome to flywing-tech.com ｜ info@flywing-tech.com
- English
Account & Orders
New Account? Start here
IPL60R385CPAUMA1
RoHS 
RoHS compliant
RoHS compliantPackage 4-PowerTSFN
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 650V 9A 4-Pin VSON
PDF
/
Buying Options
Total Price: USD $1.85
Unit Price: USD $1.850743
≥1 USD $1.850743
≥10 USD $1.745985
≥100 USD $1.647157
≥500 USD $1.553917
≥1000 USD $1.465965
Inventory: 3747
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 40 Weeks
Physical
Mounting Type Surface Mount
Package / Case 4-PowerTSFN
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series CoolMOS?
JESD-609 Code e3
Pbfree Code no
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 2A (4 Weeks)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code S-PSSO-N4
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 83W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 385m Ω @ 5.2A, 10V
Vgs(th) (Max) @ Id 3.5V @ 340μA
Input Capacitance (Ciss) (Max) @ Vds 790pF @ 100V
Current - Continuous Drain (Id) @ 25°C 9A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain-source On Resistance-Max 0.385Ohm
Pulsed Drain Current-Max (IDM) 27A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 227 mJ
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
ZC931TC
Diodes IncorporatedRecommended For You
IXTH90P10P
IXYS