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IRL3705ZLPBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-262-3 Long Leads, I2Pak, TO-262AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 55V 75A TO-262
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Buying Options
Total Price: USD $4.42
Unit Price: USD $4.42415
≥1 USD $4.42415
≥200 USD $3.62995
≥500 USD $3.5169
≥1000 USD $3.40385
Inventory: 7851
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Dimensions
Height 9.65mm
Length 10.668mm
Width 4.826mm
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2010
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Voltage - Rated DC 55V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Current Rating 86A
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Power Dissipation-Max 130W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 130W
Case Connection DRAIN
Turn On Delay Time 17 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 52A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2880pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 60nC @ 5V
Rise Time 240 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 83 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 75A
Gate to Source Voltage (Vgs) 16V
Drain-source On Resistance-Max 0.008Ohm
Drain to Source Breakdown Voltage 55V
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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